A novel GaN MMICs packaging using silicon based technology

摘要

In this paper a novel package based on GaN MMICs chipset, comprising a driver amplifier and a power amplifier using Si-based packing technique will be presented. The GaN HEMT on SiC power amplifiers is superior to GaAs/Si based FET due to its higher power density and wider band gap. The thermal matching and thermal conductivity of the package are taken into consideration in order to avoid the high channel temperature lower the performance of the power amplifier. For an operation frequency band from 14 to 18 GHz, the module achieves beyond 39 dBm of output power under pulsed conditions Vgs = -2 V and Vds = +28 V, small signal gain of around 36.8 dB. The chipset are assembled in a 9.7 mm ×6.5 mm × 0.81 mm Si-based package.