Analytical and multiphysial-numerical models for plasma-waves in double and multiple channel HEMTs

摘要

We explore the possibilities of plasma-wave devics using multiple channel HEMT (high electron mobility transistor) structures. The multiple channel HEMTs are studied using rigorous analytical methods and full-wave-hydrodynamic numerical models. Using the electromagnetic field profiles and hydrodynamic conductivity, we first derive dispersion relations for the plasma-wave propagation within double channel systems. Further, using the numerical solutions, we extend the study to multiple (>2) channel systems. Results for specific applications of resonant and non-resonant plasma-wave devices are then discussed.