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Interconnect roles for emerging memory technologies in 3D architecture

机译:3D架构中新兴内存技术的互连角色

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Emerging memory integration into 3D architecture has the potential to overcome current memory shortfalls in speed, power consumption, reliability and cost vectors for the future data centric computing. Intensive investment has been placed in various cell structures (PCRAM, STTRAM, OxRAM and CBRAM) and 3D architectures (3D XPoint, 3D ReRAM) recently to capture the future commercial IoT market. After reviewing status of emerging memories and 3D architectures, that are generally back end of the line (BEOL) compatible, this talk will highlight the challenges of interconnect in these new element and integration, and discuss the need of new materials.
机译:将内存集成到3D架构中的潜力有可能克服当前内存在速度,功耗,可靠性和成本向量方面的不足,以便将来进行以数据为中心的计算。最近,已经在各种单元结构(PCRAM,STTRAM,OxRAM和CBRAM)和3D架构(3D XPoint,3D ReRAM)上进行了大量投资,以占领未来的商业物联网市场。在回顾了通常与产品线后端(BEOL)兼容的新兴内存和3D架构的状态之后,本演讲将重点介绍这些新元素和集成中互连的挑战,并讨论对新材料的需求。

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