Mixed-signal Microelectronics Group, Eindhoven University of Technology, Eindhoven, The Netherlands;
Mixed-signal Microelectronics Group, Eindhoven University of Technology, Eindhoven, The Netherlands;
Mixed-signal Microelectronics Group, Eindhoven University of Technology, Eindhoven, The Netherlands;
Mixed-signal Microelectronics Group, Eindhoven University of Technology, Eindhoven, The Netherlands;
Mixed-signal Microelectronics Group, Eindhoven University of Technology, Eindhoven, The Netherlands;
Bandwidth; Gain; Broadband communication; Noise measurement; Semiconductor device measurement; Impedance; Transistors;
机译:11.81 mW 3.1-10.6 GHz超宽带低噪声放大器,噪声系数为2.87±0.19 dB,采用0.18μmCMOS技术的增益为12.52±0.81 dB
机译:具有3.85±0.25 dB噪声系数和18.1±1.9 dB增益的18.85 mW 20-29 GHz宽带CMOS低噪声放大器
机译:18-56-GHz宽带GaN低噪声放大器,具有2.2-4.4 -4-DB噪声系数
机译:具有2.5-4.0 dB噪声系数的16-43 GHz低噪声放大器
机译:用于WLAN应用的5.8 GHz CMOS低噪声放大器。
机译:具有3.5 dB噪声系数的183 GHz变形HEMT低噪声放大器