Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Wolfspeed, a Cree Company, RTP, NC 27709, USA;
Silicon carbide; MOSFET; Schottky diodes; Insulated gate bipolar transistors; Silicon; Switches;
机译:具有低导通电阻和高开关速度的下一代平面1700 V,20mΩ4H-SiC DMOSFET
机译:1200 V和1700 V 4H-SiC DMOSFET在下一代功率转换应用中的可靠性能
机译:用于低损耗,高频开关应用的2 KV 4H-SiC DMOSFET
机译:下一代平面1700 V,20MΩ4H-SIC DMOSFET具有低特定的导通电阻和高开关速度
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:通过在1700 nm窗口激发的三次谐波生成成像来进行体内深脑血流速度测量
机译:一种改进的4H-SIC沟槽MOS屏障肖特基二极管,导通电阻较低