150mm Silicon carbide selective embedded epitaxial growth technology by CVD

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compared to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).