Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
The Japan Steel Works, Japan;
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
Mitsubishi Chemical Corp., Japan;
The Japan Steel Works, Japan;
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan;
Gallium nitride; Crystals; Substrates; Chemicals; Steel; Mass production;
机译:通过氨热法生长的GaN块状晶体以及在这些晶体上生长的GaN外延层的非接触电反射
机译:通过使用酸性矿化剂通过氨热法合成的GaN种子上的氢化物气相外延生长的m面GaN单晶的电子和光学特性
机译:氢化物气相外延在单热GaN晶种上生长的大块GaN晶体中应变的微观拉曼研究
机译:酸性氨水法生长的高品质散装GaN晶体
机译:镍 - 铬通量法生长的块状六边形氮化硼单晶的优化与表征
机译:凹图案蓝宝石衬底上生长的GaN基LED的晶体质量和光输出功率
机译:通过氨热法生长在c,a,m和(20.1)平面gan本体衬底上沉积的algan / gan异质结构的非接触电反射