Res. Nucl. Center of Birnie, Ain Oussera, Algeria;
Fourier transform infrared spectra; annealing; boron; elemental semiconductors; lithium; neutron effects; silicon; ultraviolet spectra; vacancies (crystal); visible spectra; CZ- silicon; FTIR spectra; Fourier transform infrared spectroscopy; Si:Li,B; UV-visible spectrophotometry; annealing; boron transmutation; divacancy defect concentration; lithium impurity atoms; near edge absorption; neutron fluences; neutron irradiation; optical properties; temperature 293 K to 298 K; temperature 550 degC; vacancy-oxygen complex ce;
机译:中子辐照的CZ硅(CZ-Si)的结构,拓扑,电学和发光特性
机译:中子辐照和低温退火对高掺杂4H碳化硅电学性能的影响
机译:Fe62M35Ti3快中子和等温退火对模型合金结构的影响
机译:中子辐照和退火CZ-硅的温度效应
机译:中子辐照和温度对光纤和材料的影响
机译:西咪替丁对长期低剂量率中子和60Coγ射线辐照的大鼠的辐射防护作用
机译:用于集成温度感测二极管的快速中子辐照的低功耗原位退火缓解技术
机译:最终报告:中子辐照在低温和后续退火对铍的热导率和电阻率的影响