Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

摘要

We have studied the mobility in the FDSOI devices as a function of silicon thickness, doping, surface orientation and applying different back biases. This study is also done in the near-spacer-region that is partially inverted. Simulations have been obtained with a self-consistent Poisson-Schrödinger which provides a precise energy distribution of carriers and, allied to a Kubo-Greenwood carrier mobility solver, performs a quantum corrected drift diffusion (QCDD) model, capable of capturing non local effects on transport (tunneling) and mobility (influence of geometry).