The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities

摘要

We fabricated ferroelectric (Pb,La)(Zr,Ti)O (PLZT) capacitors by pulsed laser deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing at 750°C for 10 min exhibited the best ferroelectric properties in this work. With higher deposition temperature than R.T. and lower annealing temperature than 700°C, large hysteresis loops were not observed.