A novel fractal inductor for RF applications

摘要

In this paper, a novel fractal inductor was presented. This inductor provides a high quality factor of 19.8 at a frequency of 9.1GHz with SRF of 47.1 GHz. The simulations are carried out using Full wave High Frequency Structural Simulator (HFSS) for a single layered 0.18μm technology. The simulation results show an improvement in quality factor by 22% over conventional fractal inductor and results also shows an improvement in SRF by 21% over conventional fractal inductor.