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Fabrication of templates for achieving one-to-one grain matching in HAMR media

机译:制作模板以在HAMR介质中实现一对一的晶粒匹配

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In previous work, we reported on the fabrication of a regular template for the controlled two-phase growth of conventional CoPt-SiO PMR media. The template consisted of dome-morphology patterned into a Platinum FCC (111) textured thin film. When CoPt-SiO was sputtered, the artificially patterned domes acted as sites on which the CoPt grains grew, with the segregant growing within the trenches between these domes[1]. In current PMR media, a similar approach is used to achieve grain-to-grain matching between the Ru underlayer and the CoPt grains, wherein the Ru dome morphology is fabricated using high Ar pressure during the sputtering process. In case of HAMR media however, achieving grain-to-grain matching between the underlayer is proving quite challenging. In this work, we explore using a pre-fabricated dome morphology in the underlayer to achieve grain-to-grain matching for the HAMR media (FePt). Block copolymers are first used to fabricate a pattern consisting of a hexagonal lattice of spheres of one block in the other block's matrix . The pattern is then transferred into an amorphous carbon hard mask using Reactive Ion Etching (RIE) and subsequently into the underlayers using ion-milling, as described in our previous work[1] .
机译:在以前的工作中,我们报道了常规模板的制备,该模板用于常规CoPt-SiO PMR介质的受控两相生长。模板由图案化成铂FCC(111)纹理薄膜的圆顶形态组成。当溅射CoPt-SiO时,人工图案化的圆顶充当了CoPt晶粒生长的位置,而隔离物则在这些圆顶之间的沟槽中生长[1]。在当前的PMR介质中,使用相似的方法来实现Ru底层和CoPt晶粒之间的晶粒与晶粒的匹配,其中Ru圆顶的形貌是在溅射过程中使用高Ar压力制成的。但是,对于HAMR介质,在底层之间实现晶粒与晶粒的匹配被证明是非常具有挑战性的。在这项工作中,我们探索在底层中使用预制的圆顶形态来实现HAMR介质(FePt)的晶粒与晶粒匹配。嵌段共聚物首先用于制造由另一嵌段的基质中一个嵌段的球体的六边形格子组成的图案。如我们先前的工作[1]所述,然后使用反应离子刻蚀(RIE)将图案转移到非晶碳硬掩模中,然后使用离子铣削将其转移到底层中。

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