首页> 外文会议>2015 IEEE International Conference on Innovations in Information , Embedded and Communication Systems >A tunneling FET exploiting in various structures and different models: A review
【24h】

A tunneling FET exploiting in various structures and different models: A review

机译:利用各种结构和不同模型的隧道FET:回顾

获取原文
获取原文并翻译 | 示例

摘要

A great obstacle for ultra low MOSFETs functioning at very low voltages is there physical limit of the inversion subthreshold swing of 60mv/dec at 300K. Quantum mechanical tunneling of carriers from the source into the channel in Tunnel FETs (TFETs) overcomes in principle this hurdle. The rapid forthcoming of research regarding the TFET leads to a wide range of studied device geometries, different heterostructure combinations and applied technological methods. In this review paper, we discuss about the working principle of TFETs and we focus on various structures and different analytical models available for TFETs.
机译:超低MOSFET在非常低的电压下工作的一大障碍是,在300K时,反转亚阈值摆幅的物理极限为60mv / dec。载流子从源极到隧道FET(TFET)中的通道的量子机械隧穿原则上克服了这一障碍。关于TFET的研究的迅速发展导致了广泛的研究器件几何形状,不同的异质结构组合和应用的技术方法。在这篇评论文章中,我们讨论了TFET的工作原理,并着重于TFET的各种结构和不同的分析模型。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号