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Saturable absorber nanolithography by vectorial nonparaxial Gaussian beam

机译:矢量非傍轴高斯光束的饱和吸收体纳米光刻

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The non-paraxial and vectorial effects have an important role in the dynamics of highly confined beam in nonlinear medium. In this paper, we study the vectorial non-paraxial propagation of Gaussian field in the saturable absorber media numerically with the aim of nano-lithography. It is shown that in the optimal regimes for nanolithography, the mutual coupling between components of optical field and mode coupling between different orders of Hermite-Gaussian mode lead to generation of various patterns upon propagation through saturable absorber media. The vectorial effect is responsible for the symmetry breaking. For converging input beam, while the intense part of the beam goes toward the focal point, the low intensity parts of beam profile are eliminated. Finally, the Gaussian profile is recovered at the location of minimum spot size which is of the order of several tens of nanometer.
机译:非傍轴和矢量效应在非线性介质中高约束光束的动力学中具有重要作用。本文以纳米光刻技术为研究对象,对高斯场在饱和吸收介质中的矢量非傍轴传播进行了数值研究。结果表明,在纳米光刻的最佳方案中,光场分量之间的相互耦合以及埃尔米-高斯模式的不同阶次之间的模式耦合会导致在通过可饱和吸收剂介质传播时产生各种模式。向量效应负责对称性的破坏。对于会聚的输入光束,当光束的强光部分移向焦点时,将消除光束轮廓的低强度部分。最后,在几十纳米的最小光斑尺寸的位置处恢复了高斯分布。

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