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Reliability analysis of power MOSFET

机译:功率MOSFET的可靠性分析

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摘要

As an indispensible part of electronic equipment, the reliability of the whole system is affected by the degradation performance of power MOSFET tube. Based on geometry, material properties and boundary conditions, the repeated testing can be reduced, and the period of failure analysis can be shortened. This article is based on the finite element model of power MOSFET TO-263, electric thermal — mechanical coupling analysis is introduced. The steady and transient thermal analysis is given, and then the inelastic strain range of thermal stress is calculated Finally on the basis of these, simulation can be realized, thermal fatigue life of power MOSFET tube is predicted through the Coffin — Manson's law.
机译:作为电子设备不可缺少的一部分,整个系统的可靠性会受到功率MOSFET管性能下降的影响。根据几何形状,材料特性和边界条件,可以减少重复测试,并可以缩短失效分析的时间。本文基于功率MOSFET TO-263的有限元模型,介绍了电热—机械耦合分析。给出了稳态和瞬态热分析,然后计算了热应力的非弹性应变范围。最后,在此基础上,可以实现仿真,并通过科芬-曼森定律预测功率MOSFET管的热疲劳寿命。

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