Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

摘要

Interface properties have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al2O3, and the energy level of the interface state became shallow with increasing the annealing temperature.