Synthesis and PEALD evaluation of new Nickel precursors

摘要

A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 µO·cm) was obtained at 400 °C by PEALD, which is close to the resistivity value of bulk Nickel (5–10 µO·cm) [1].