Design and simulation of low noise amplifier for RF front end at L band

摘要

In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.