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Optimizing roughness of plated copper sub assemblies through oxide alternative process

机译:通过氧化物替代工艺优化电镀铜子组件的粗糙度

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This paper discusses the investigation and testing to better understand the effect of baking plated copper sub-assemblies before Oxide Alternative process. Previous documented work had discussed the benefits of baking electroplated copper before Sulfuric acid and Hydrogen Peroxide type micro-etches including "Oxide Alternatives". This paper focuses on achieving consistent etch rates and improving the consistency and uniformity of the resulting copper surface morphology by baking electroplated copper sub-assemblies to anneal the copper before Oxide Alternative Process. We have seen that different types of electroplated copper and plating conditions react differently when measuring etch rates with various hold times at room temperature after plate and also with baking after plating. Etch rates were measured and compared using standard weight loss coupons and plated copper coupons. Copper surface roughness was measured using Zygo Light Interferometer.
机译:本文讨论了调查和测试,以更好地了解氧化替代工艺之前烘烤镀铜子组件的效果。先前的文献工作讨论了在硫酸和过氧化氢型微蚀刻(包括“氧化物替代品”)之前烘烤电镀铜的好处。本文着重于通过在氧化替代工艺之前烘烤电镀铜子组件以对铜进行退火,来实现一致的蚀刻速率并改善所得铜表面形态的一致性和均匀性。我们已经看到,在测量镀覆后室温下各种保持时间以及镀覆后烘烤时的蚀刻速率时,不同类型的电镀铜和镀覆条件的反应不同。使用标准的减重试样和镀铜试样测量并比较蚀刻速率。使用Zygo光干涉仪测量铜表面粗糙度。

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