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Electroplated copper filling of through holes on varying substrate thickness

机译:电镀铜填充通孔,可改变基板厚度

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This paper discusses a through-hole copper filling process for application to high density interconnect constructions and IC substrates. The process consists of two acid copper plating cycles. The first cycle uses periodic pulse reverse electroplating to form a bridge in the middle of the hole, followed by direct current electroplating to fill the resultant vias formed during the bridge cycle. This process can provide defect-free filled holes with total plated copper on the surface below 25 μm, with dimples less than 5 μm for boards with core thickness of 0.2 mm and 0.25 mm. This process was designed to be deployed in vertical continuous plating equipment, (VCP), thus reducing capital equipment costs as compared to horizontal conveyorized electroplaters. The chemical components, copper, acid, and additive, for the periodic pulse reverse plating cycle, are optimized via experimental conditions selected from DOE (design of experiments) software. Critical parameters are identified and the impact on cavity formation during the bridging step is quantified. The additive and copper concentrations play key roles in reducing defects during bridge formation and on the resultant via formation. A high performance via-filling process is used to fill the formed vias, with less than 5 um dimple depth, while depositing approximately 12 microns on the surface. The thin surface copper enables fine line resolution without the need for planarization or grinding. The mechanical properties of the plated deposit meet or exceed all IPC standards. This process is applicable to both laser-drilled X shape through holes and mechanically-drilled straight holes. Laser-drilled through holes are bridged faster than mechanically drilled holes. However, mechanically drilled holes show a lower tendency for drilling induced defects, especially at a hole diameter of 0.1mm. This process has shown capability to fill through-holes in thicker cores of 0.4 mm to 0.8 mm, where further invest- gation continues.
机译:本文讨论了用于高密度互连结构和IC基板的通孔铜填充工艺。该过程包括两个酸性镀铜循环。第一个周期使用周期性的脉冲反向电镀在孔的中间形成一个桥,然后进行直流电镀以填充在桥周期中形成的最终通孔。此工艺可提供无缺陷的填充孔,表面上的总镀铜层低于25μm,而对于厚度为0.2 mm和0.25 mm的板,凹坑小于5μm。该工艺设计用于垂直连续电镀设备(VCP),因此与水平输送式电镀机相比,降低了设备成本。通过从DOE(实验设计)软件中选择的实验条件,优化了用于周期性脉冲反向电镀循环的化学成分,铜,酸和添加剂。确定关键参数,并量化桥接步骤期间对空腔形成的影响。添加剂和铜的浓度在减少桥形成过程中的缺陷以及形成的通孔形成中起着关键作用。高性能通孔填充工艺用于填充形成的通孔,凹痕深度小于5 um,同时在表面上沉积大约12微米。薄表面铜可以实现精细的线分辨率,而无需进行平面化或打磨。镀层的机械性能达到或超过所有IPC标准。此过程适用于激光钻孔的X形通孔和机械钻孔的直孔。激光钻孔的通孔比机械钻孔的桥接速度更快。但是,机械钻孔显示出较低的钻孔诱发缺陷趋势,特别是在0.1mm的孔直径下。该工艺已显示出能够填充0.4 mm至0.8 mm的较厚铁芯中的通孔的能力,并继续进行进一步的研究。

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