Epitaxial growth and crystalline properties of Ge1#x2212;x#x2212;ySixSny layers on Ge(001) substrates

摘要

We investigated the crystalline structure of Ge1−x−ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1−x−ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1−x−ySixSny layer even with small misfit strain.