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Selex ES GaN Technology improvements, results and Ramp;D approach for Defense and Space application

机译:Selex ES GaN技术在国防和太空应用中的改进,成果和研发方法

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摘要

The capability to control “enabling technologies” is mandatory to overcome any restrictions on exports of critical components and therefore represents a strategic condition for the companies operating in military and aerospace market. In this scenario, Selex ES Foundry has developed and optimized GaN-HEMT process for manufacturing high power HPAs and robust LNAs as request for narrow and wide band applications up to 18GHz. The technology, based on 0.25µm gate length device, represents a high performance and reliable solution and is actually in assessment for Space Qualification.
机译:为了克服对关键零部件出口的任何限制,必须具有控制“使能技术”的能力,因此,这是在军事和航空航天市场运营的公司的战略条件。在这种情况下,Selex ES Foundry已经开发和优化了GaN-HEMT工艺,以制造高功率HPA和坚固的LNA,以满足高达18GHz的窄带和宽带应用的要求。该技术基于0.25µm的门长器件,代表了一种高性能和可靠的解决方案,并且实际上正在评估空间质量。

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