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A sub-2dB noise figure, 200–3700 MHz receiver for LTE-A applications

机译:低于2dB的噪声系数,适用于LTE-A应用的200–3700 MHz接收机

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A wideband low-noise amplifier (LNA) with an inherent active-balun and a wideband Downconversion Mixer are proposed in this work. For the LNA, a combination of a common-gate (CG) stage and a common-source (CS) stage is used to acquire the differential output signal out of a single-ended input while still maintaining acceptable output balancing. A positive feedback loop is added to increase the degree of freedom in choosing the design parameters. This leads to decreasing the overall noise figure (NF) without affecting the input matching performance. The LNA shows a NF below 1.86dB, gain of 25.9dB, and IIP3 of −8dBm across all band (200–3700 MHz). A minimum NF of 1.75dB was achieved at 400–1500 MHz band. For the Mixer, A dual current bleeding technique is used to maintain the linear operation at high input amplitudes to achieve high linearity reaching a maximum IIP3 value of 9.66dBm. The Mixer shows a NF of 13dB and gain 6dB. The front-end is designed in 0.13μm standard CMOS process. A total minimum NF of 1.9dB was achieved with a gain of 31.9dB.
机译:在这项工作中,提出了具有固有有源平衡不平衡放大器的宽带低噪声放大器(LNA)和宽带下变频混频器。对于LNA,将共栅(CG)级和共源(CS)级结合使用以从单端输入中获取差分输出信号,同时仍保持可接受的输出平衡。添加了正反馈环路以增加选择设计参数的自由度。这导致在不影响输入匹配性能的情况下降低了总噪声系数(NF)。 LNA在整个频带(200–3700 MHz)内均显示出低于1.86dB的NF,25.9dB的增益和-8dBm的IIP3。在400–1500 MHz频段内,最小NF为1.75dB。对于混频器,使用双重电流抑制技术来在高输入幅度下保持线性工作,以实现高线性度,从而达到最大IIP3值为9.66dBm。调音台的NF为13dB,增益为6dB。前端采用0.13μm标准CMOS工艺设计。总最小NF为1.9dB,增益为31.9dB。

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