Low-temperature characterization of hall and effective mobility in junctionless transistors

摘要

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (Ns) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.