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Cross-coupled substrate integrated waveguide filter with sharp sideband performance

机译:具有陡峭边带性能的交叉耦合衬底集成波导滤波器

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In this paper, an X-band cross-coupled substrate integrated waveguide (SIW) filter with sharp sideband performance is proposed. The negative coupling is implemented by 201 TE -mode response in the fourth oversized cavity, which is combined with positive coupling to generate transmission zeros(TZs) for improving the sideband performance.The filter with a passband of 11.5GHz∼12.5GHz is fabricated on a single-layer substrate with the standard PCB process. Measured results show that, the in-band insertion loss is 1.2dB, and the stopband attenuation is better than 50dB, it has sharper transition performance at both the upper sideband and lower sideband, compared to the traditional direct coupling SIW filters.
机译:本文提出了一种具有陡峭边带性能的X波段交叉耦合衬底集成波导(SIW)滤波器。负耦合通过第四个超大腔中的201 TE模式响应来实现,再与正耦合相结合以生成传输零点(TZ)以改善边带性能。在其上制造了具有11.5GHz〜12.5GHz的通带的滤波器采用标准PCB工艺的单层基板。测量结果表明,与传统的直接耦合SIW滤波器相比,带内插入损耗为1.2dB,阻带衰减优于50dB,在上边带和下边带均具有更陡峭的过渡性能。

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