首页> 外文会议>2013 International Conference on Advanced Nanomaterials and Emerging Engineering Technologies >Synthesis and characterization of nanostructured CdZnSSe thin films by arrested precipitation technique (APT)
【24h】

Synthesis and characterization of nanostructured CdZnSSe thin films by arrested precipitation technique (APT)

机译:阻滞沉淀技术(APT)合成和表征纳米结构的CdZnSSe薄膜

获取原文
获取原文并翻译 | 示例

摘要

In the present investigation efforts are made to prepare CdZnSSechalcogenide thin films by simple, cost effective arrested precipitation technique (APT). The films were obtained in a chemical bath maintained at 55±5°C temperature, pH 10.8±0.2 and deposition time 90 min. The obtained thin films were thoroughly characterized paying particular attention to their structural, compositional, morphological and optical properties. The surface morphology and composition of as deposited thin films are studied by using Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). SEM micrographs reveal non- uniform distribution and nearly spherical grains. The X-ray diffraction pattern showed that highly textured CdZnSSe films with hexagonal structure. The optical absorption spectra show band gap value 2.12 eV.
机译:在本研究中,人们正在努力通过简单,经济高效的阻滞沉淀技术(APT)制备CdZnSSechalcogenide薄膜。在维持55±5℃的温度,pH 10.8±0.2和沉积时间90分钟的化学浴中获得膜。对获得的薄膜进行了彻底的表征,尤其要注意它们的结构,组成,形态和光学性质。通过使用扫描电子显微镜(SEM)和能量色散X射线光谱(EDS)研究沉积薄膜的表面形态和组成。 SEM显微照片显示出不均匀的分布和接近球形的晶粒。 X射线衍射图表明,具有六边形结构的高织构化CdZnSSe膜。光吸收光谱显示带隙值为2.12eV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号