MRAM-based logic array for large-scale non-volatile logic-in-memory applications

摘要

A novel non-volatile logic-in-memory (NV-LIM) architecture is introduced to extend the functionality of the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) to include performing logic operations with no extra hardware added. The access transistors of the one-transistor/one-magnetic tunnel junction (1T/1MTJ) cells are used as voltage-controlled resistors. This provides the structural asymmetry required for realizing a fundamental Boolean logic operation called material implication and inherently realizes a NV-LIM architecture which uses MTJs as the main computing elements (logic gate).