首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >Properties of Hf/Zr doped (Na1/2Bi1/2TiO3) relaxor-ferroelectric ceramics under bias electrical field
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Properties of Hf/Zr doped (Na1/2Bi1/2TiO3) relaxor-ferroelectric ceramics under bias electrical field

机译:偏置电场下掺Hf / Zr的(Na1 / 2Bi1 / 2TiO3)弛豫铁电陶瓷的性能

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摘要

In this study, Hafnium or Zirconium doped grain oriented (Na1/2Bi1/2)TiO3 (NBT) ceramics with <001> orientation were fabricated by Templated Grain Growth (TGG) method using anisotropically shaped SrTiO3 template particles. These molten salt synthesized SrTiO3 platelets were tape cast with calcined NBT powder, and sintered at 1200° C for 6 h. Texture fractions up to 70% have been obtained. Also, electromechanical properties of Hf4+ and Zr4+ doped NBT ceramics under electrical bias were studied.
机译:在这项研究中,采用各向异性形状的SrTiO3模板颗粒,通过模板晶粒生长(TGG)方法制备了具有<001>取向的Ha或锆掺杂的晶粒取向(Na1 / 2Bi1 / 2)TiO3(NBT)陶瓷。将这些熔融盐合成的SrTiO3薄片用煅烧的NBT粉末流延铸造,并在1200°C烧结6小时。已获得高达70%的织构分数。同时研究了Hf 4 + 和Zr 4 + 掺杂的NBT陶瓷在电偏压下的机电性能。

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