Design and simulation of a W-band broadband Low Noise Amplifier

摘要

This paper introduces the design of a four-stage W-band broadband Low Noise Amplifier (LNA) using Monolithic Microwave Integrated Circuit (MMIC). The LNA uses CPW as the input and output port and has a low noise figure using GaAs MHEMT technology. In order to reduce the chip size and circuit's complexity, single bias voltage supply is used in this design. The LNA has attained a gain more than 19dB over the frequency range 90 ∼ 113GHz and the noise figure lower than 3.2dB.