A Stochastic Model for NBTI-Induced LSI Degradation in Field

摘要

Electronic systems that consist of various LSIs require very high reliability in field, however, physical degradation phenomena such as NBTI (Negative Bias Temperature Instability) make it difficult to keep reliability in field only by conventional manufacturing-based LSI testing. This paper proposes a stochastic model for NBTI-induced degradation in field and analyzes the effects of parameters that affect LSI failure rate by simulation. Quantitative discussions show a guideline for reliable design and test.