The example of circuit analysis to assist 2^nd-generation hot spot for the failure localization

摘要

Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated.