A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance

摘要

With steep sub-threshold slope, tunneling FETs (TFETs) are promising candidates for ultra-low voltage operation, achieving low leakage current and superior performance compared with the conventional MOSFETs. However, the broad soft transition region in the Id-Vgs characteristics, where Id increases slowly to reach saturation following the steep slope region, results in large crossover region/current in an inverter, thus degrading the Hold/Read Static Noise Margin (H/RSNM) of TFET SRAMs. The Write-ability and Write Static Noise Margin (WSNM) of TFET SRAMs are constrained by the uni-directional conduction characteristics caused by the asymmetric source-drain structure and large cross-over contention of the Write access transistor and the holding transistor. In this paper, we present a detailed analysis of TFET circuit switching characteristics/performance and compare the stability/performance of several TFET SRAM cells using atomistic TCAD mixed-mode simulations. A robust 7T Driver-Less (DL) TFET SRAM cell is proposed. The proposed 7T DL TFET SRAM cell, with decoupled Read current path from cell storage node and push-pull Write action with asymmetrical raised-cell-virtual-ground Write-assist, provides significant improvement in Read/Write stability and performance.