Design of GaN and SiC 5–20kV vertical superjunction structures

摘要

We report on the design, simulations and optimization of 5–20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (Ron, sp) have been obtained by varying the pillar dosage, length and width.