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Design of a novel pulse current source chip used in phase change memory testing system

机译:用于相变存储器测试系统的新型脉冲电流源芯片的设计

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摘要

Circuit design of an adaptable pulse current source chip is presented in this paper. The pulse current source is supposed to be used to supply Reset and Set current in the phase change memory chip testing system. The value and width of the pulse current source are variable, with the maximum value of 10 mA and minimum width of 50ns. Two pulse currents output simultaneously with the same width but different values. A voltage pulse input is used to control the width of pulse current output. This high frequency voltage pulse could induce noise jamming to the inner circuits. To avoid this, a novel ESD and bonding structure is proposed.
机译:本文提出了一种自适应脉冲电流源芯片的电路设计。脉冲电流源应该用于在相变存储芯片测试系统中提供复位和设置电流。脉冲电流源的值和宽度是可变的,最大值为10 mA,最小宽度为50ns。两个脉冲电流以相同的宽度但不同的值同时输出。电压脉冲输入用于控制脉冲电流输出的宽度。此高频电压脉冲可能会导致噪声干扰内部电路。为了避免这种情况,提出了一种新颖的ESD和结合结构。

著录项

  • 来源
  • 会议地点 Shanghai(CN)
  • 作者单位

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    pulse current source; Reset/Set current; phase change memory; low noise ESD and bonding structure;

    机译:脉冲电流源重置/设置电流;相变存储器低噪声ESD和键合结构;

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