Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China Graduate School of Chinese Academy of Sciences, Beijing 100039, PR China;
Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China;
Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China Key Lab of Functional Inorganic Material Chemistry (Heilongjiang University), Ministry of Education, Harbin 150080, PR China;
GeSbTe; phase change lithography; XPS; selective wet etching mechanism;
机译:四甲基铵热光刻法选择性刻蚀Ge_2Sb_2Te_5相变薄膜
机译:四甲基铵热光刻法选择性腐蚀Ge 2 sub> Sb 2 sub> Te 5 sub>相变薄膜
机译:用于相变存储器的Ge {sub} 2Sb {sub} 2Te {sub} 5薄膜的湿蚀特性
机译:XPS研究Gesbte相变薄膜与四甲基氢氧化物的选择性湿法蚀刻机理
机译:基于八氟环丁烷的等离子放电的特征,用于二氧化硅和低K介电薄膜的选择性刻蚀和处理。
机译:氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响
机译:四甲基铵在热光刻中选择性湿蚀刻Ge2Sb2Te5相变薄膜