Structural and optical properties of ZnO thin film prepared by oxidation of Zn metal powders

摘要

The zinc oxide(ZnO), wide direct band-gap (3.37 eV), is a promising material for short wavelength optoelectronic devices, especially for ultraviolet (UV) light-emitting diodes (LEDs) and laser diodes (LDs), due to its large exciton binding energy of 60 meV [1–4]. For device applications, such as high efficiency UV light emitting devices, it is important to suppress the visible emission.