Effect of deposition temperature to electrical, structural and optical properties of amorphous carbon thin film prepared by TCVD

摘要

Amorphous carbon (a-C) thin films have been prepared by thermal chemical vapor deposition (TCVD) technique at different temperature. The preparation involved argon (Ar), and camphor as carrier gas and carbon source respectively. The effects of deposition temperature in the a-C thin film on electrical, structural and optical properties was characterized by using Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software, Scanning Electron Microscopy (SEM) and UV-VIS-NIR spectroscopy. The current-voltage (I-V) measurement studies demonstrate that the conductivity increased along the deposition temperature. There are also significant changes in structural and optical band gap as deposition temperature varies.