P-type silicon wafer (<100> orientation; boron doping; 0.75 ∼ 10 Ωcm−1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodization. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and EL spectra were investigated. Maximum peak position of PL spectrum at about ∼675 nm, while the maximum EL spectrum at about ∼650 nm (which is similar to the PL spectrum).
展开▼
机译：使用P型硅片（<100>取向；硼掺杂； 0.75〜10μcm -1 ）制备多孔硅纳米结构（PSiNs）的样品。所有样品均采用光电化学阳极氧化法制备。固定蚀刻时间为30分钟，电解质，氢氟酸48％（HF48％）和无水乙醇（C 2 H 5 OH）的体积比为1：1用于各种电流密度J。样品A（J = 10 mA / cm 2 ），样品B（J = 20 mA / cm 2 ），样品C （J = 30 mA / cm 2 ），样品D（J = 40 mA / cm 2 ）和样品E（J = 50 mA / cm 2 ） / sup>）。研究了光致发光（PL）和EL光谱。 PL光谱的最大峰位置在约675 nm处，而最大EL光谱在约650 nm处（与PL光谱相似）。
展开▼
