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I/O supply current synthesis for power integrity analysis of single-ended signaling scheme

机译:I / O电源电流合成,用于单端信令方案的电源完整性分析

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The simultaneous switching noise (SSN) from single-ended signaling I/O interfaces is significant when there are multiple channels transmitting data in parallel. The memory interfaces use the single-ended signaling scheme where the power delivery noise spectrum may coincide with some critical radio bands or resonance frequencies within the platform depending on the bit pattern being transmitted from the driver buffers. This will adversely affect the timing margin and can be one of the electromagnetic interference (EMI) sources as well. While it is good to use transistor buffer models in SSN estimation, it may significantly increase the complexity resulting in too long simulation time or convergence problems. The suggested method takes the transient supply currents when the transistor buffer transits its state from 0 to 1 and from 1 to 0, and synthesizes the full supply current for an arbitrary bit-pattern and data rate. This allows high accuracy in the supply current profiles while minimizing the power integrity simulation complexity. The method is extendable to tri-state buffers and different channel termination schemes.
机译:当有多个通道并行传输数据时,来自单端信令I / O接口的同时切换噪声(SSN)十分重要。存储器接口使用单端信令方案,其中功率传输噪声频谱可能与平台中的某些关键无线电频段或谐振频率一致,具体取决于从驱动器缓冲区传输的位模式。这将不利地影响时序裕度,并且也可能是电磁干扰(EMI)源之一。虽然在SSN估计中使用晶体管缓冲器模型是很好的,但它可能会显着增加复杂度,从而导致仿真时间过长或收敛问题。当晶体管缓冲器的状态从0过渡到1并从1过渡到0时,建议的方法采用瞬态电源电流,并为任意位模式和数据速率合成全部电源电流。这样可以在电源电流曲线中实现高精度,同时将电源完整性仿真的复杂性降至最低。该方法可扩展到三态缓冲器和不同的信道终端方案。

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