Thin glass substrates development and integration for through glass vias (TGV) with Cu interconnect

摘要

Through silicon via (TSV) containing interposers have been widely discussed and applied to Three-Dimensional Stacked Integrated Circuit (3D-IC) integration. Advanced silicon interposers could be derived from three essential technologies: frontside multi-level-metallization, through-substrate-via and backside metallization. The approaches used for these technologies depend upon the application requirements, especially for the TSV technology. Process development, optimization, and cost still remain as the main issue to the industry.