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A low phase noise VCO in eWLB package

机译:采用eWLB封装的低相位噪声VCO

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摘要

A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.
机译:提出了一种采用200 GHz SiGe:C技术设计的压控振荡器(VCO)的芯片封装协同设计。 VCO可使用封装定义的电感器进行频率可调。单个芯片设备的总带宽为21%,可支持三种不同雷达应用的频带。 VCO带有一个缓冲器,一个下变频器混频器(D-Cm)和一个预分频器。 VCO组装在嵌入式晶圆级球栅阵列(eWLB)封装中,其电感器位于封装扇入区域。它获得了高达18GHz的中心频率,并在100 kHz偏移频率和21.7%的总带宽下实现了-92 dBc / Hz的相位噪声(PN)值。

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