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Gas temperature measurement in Ar and Ar-Cl2 based ICP discharge: Comparison between experiments and simulations

机译:基于Ar和Ar-Cl 2 的ICP放电中的气体温度测量:实验与模拟之间的比较

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Gas temperature is an important parameter for the study of discharge modeling and in plasma etching process. We present neutral gas temperatures in Ar and Ar-Cl2 based ICP discharge measured by diode laser absorption spectroscopy (IRLAS) and Laser Induced Fluorescence (LIF) of argon metastable atoms. The temperature was deduced from the Doppler width of the 1s5→2p7 transition at 772.38nm. The line averaged temperature was determined by absorption spectroscopy, whereas the local gas temperature at the reactor centre was determined from the laser-excited 1s4←2p7 fluorescence at 810nm. The gas temperature was measured as a function of power (50–500W), pressure (5–90mTorr) and %Cl2 in Ar (0–90%). In pure Ar the temperature increase with gas pressure and RF power, reaching 600K at 90mTorr 500W, whereas in 90% Cl2 temperatures as high as 1500K were found.
机译:气体温度是研究放电建模和等离子刻蚀工艺的重要参数。我们介绍了基于Ar和Ar-Cl2的ICP放电中的中性气体温度,该温度通过二极管激光吸收光谱(IRLAS)和氩致稳原子的激光诱导荧光(LIF)测量。从1s5→2p7跃迁的多普勒宽度772.38nm推导出温度。线平均温度由吸收光谱法确定,而反应器中心的局部气体温度由激光在810nm处的1s4←2p7荧光确定。测得的气体温度是功率(50-500W),压力(5-90mTorr)和Ar中的%Cl2(0-90%)的函数。在纯Ar中,温度随气压和RF功率而增加,在90mTorr 500W时达到600K,而在90%Cl2中,温度高达1500K。

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