Current-voltage, S-parameter, LFN properties in T-R-T type ESD/EMI filters with TVS Zener diodes developed using epitaxy-based IPD technology

摘要

We have developed the T-R-T type ESD/EMI filter using new transient voltage suppressor (TVS) Zener diodes and the epitaxy-based IPD technology. The performance of the filter has been examined in terms of I-V, s-parameter, and LFN properties. The properties demonstrated that the filter kept consistency in the excellent ESD robustness over the MM ±4 kV.