首页> 外文会议>2012 25th IEEE Canadian Conference on Electrical amp; Computer Engineering. >Design and verification of integrated inductors in CMOS
【24h】

Design and verification of integrated inductors in CMOS

机译:CMOS中集成电感器的设计和验证

获取原文
获取原文并翻译 | 示例

摘要

The design and verification of several monolithic inductor structures is presented. Based on the measurement results of proof-of-concept prototypes in 65 nm CMOS, the inductance (L) and quality factor (Q) of these structures are analyzed both qualitatively and quantitatively. Also, a closed-form approximation for the inductance of vertical spirals is presented and the results are applied to design a compact inductor for serie-speaking at the input of an impedance-matched amplifier.
机译:介绍了几种单片电感器结构的设计和验证。根据概念验证原型在65 nm CMOS中的测量结果,对这些结构的电感(L)和品质因数(Q)进行了定性和定量分析。此外,给出了垂直螺旋电感的闭式近似,并将结果应用于设计紧凑的电感器,用于在阻抗匹配放大器的输入端进行串联。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号