GaAs FET with a sub-surface delta-doped channel

摘要

GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <10⁻⁴ ohm cm². A gate leakage current does not exceed 1 μA in the bias range −1.5…+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.