Monolayer graphene mode-locked 63-fs Ti:sapphire laser

摘要

Passive mode-locking of a Ti:sapphire laser employing monolayer graphene as saturable absorber was demonstrated for the first time. The large-area, high-quality monolayer graphene was fabricated by chemical vapor deposition method. Without any additional treatment, monolayer graphene shows ultrafast recovery time and nonlinear absorption properties appropriate for the bulk laser mode-locking near 800 nm. The graphene mode-locked Ti:sapphire laser delivers 63-fs pulses with a maximum output power of 480 mW.