首页> 外文会议>2012 12th IEEE International Conference on Nanotechnology. >Comparison of HgI2 nanostructures obtained in suspension in ODE and ODE/ODA
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Comparison of HgI2 nanostructures obtained in suspension in ODE and ODE/ODA

机译:在ODE和ODE / ODA中悬浮获得的HgI2纳米结构的比较

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Mercuric iodide is a vast studied semiconductor because of its properties as photoconductor. One of its main applications is as material for ionizing radiation detection. Moreover, the inclusion of HgI2 nanostructures in hybrid solar cells can be visualized as a new application. In the present work, mercuric iodide nanostructures were synthesized by the suspension method in 1-octadecene (ODE) from Hg(NO3)2.H2O and I2; and in 1-octadecene/octadecylamine (ODA) from HgO and I2. The obtained products were centrifuged and washed with heptane. X-ray diffraction (XRD) was performed to nanostructures to confirm HgI2 identity. Nanostructures size, morphology and crystallinity were determined by XRD, transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Nanoparticles were also observed by scanning electron microscopy (SEM). Crystalline nanostructures were obtained in ODE; they grow with their planes perpendicular to the [1 1 2] and [2 1 2] directions and have sizes between 40 and 300 nm depending on the synthesis time. HgI2 nanostructures obtained in ODE/ODA showed a different morphology, grow with their planes perpendicular to the [1 0 2] and [1 1 2] directions, planes and have sizes between 10 and 70 nm. Results show that nanostructures morphology and size are influenced by the ODA and this fact can be used to control HgI2 nanostructures properties for several applications including ionizing radiation imaging and hybrid solar cells development.
机译:碘化汞由于其作为光电导体的性质而被广泛研究。它的主要应用之一是作为电离辐射检测的材料。此外,HgI2纳米结构在混合太阳能电池中的包含可以可视化为一种新应用。在本工作中,通过悬浮法在Hg(NO3)2.H2O和I2中在1-十八碳烯(ODE)中合成了碘化汞纳米结构。以及HgO和I2中的1-十八碳烯/十八烷基胺(ODA)。将获得的产物离心并用庚烷洗涤。对纳米结构进行X射线衍射(XRD)以确认HgI2身份。纳米结构的大小,形貌和结晶度通过XRD,透射电子显微镜(TEM)和选择区域电子衍射(SAED)确定。还通过扫描电子显微镜(SEM)观察到纳米颗粒。在ODE中获得了晶体纳米结构。它们以垂直于[1 1 2]和[2 1 2]方向的平面生长,并且取决于合成时间,尺寸在40到300 nm之间。在ODE / ODA中获得的HgI2纳米结构表现出不同的形态,其垂直于[1 0 2]和[1 1 2]方向的平面,平面生长且尺寸在10到70 nm之间。结果表明,纳米结构的形态和尺寸受ODA的影响,这一事实可用于控制HgI2纳米结构的性能,用于电离辐射成像和混合太阳能电池开发等多种应用。

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