Study of ZnO micro-gap on SiO2/Si substrate by conventional lithography method for pH measurement

摘要

ZnO films, type of the metal-oxide semiconductor promised a wide range of application. ZnO prepared from zinc acetate dehydrate acted as a precursor and IPA acted as a solvent exhibit high crytallinity with the hexagonal wurzite structure. The ZnO films with the grains uniformly distributed on the substrate was deposited using low-cost sol-gel technique. In this paper, the zinc oxide thin films are further used for the formation of micro gap device using conventional fabrication process. The influence of surface morphologies and uniformity distribution of ZnO nanoparticles on the substrate had been investigated using FESEM, whereby the crystallization and structure types of ZnO was determined using XRD. FTIR study was used to determine the chemical compound existed on the ZnO films with the SiO2/Si acted as a substrate. The electrical characteristic of the ZnO microp gap with different pH had been tested using source meter.