首页> 外文会议>2012 10th IEEE International Conference on Semiconductor Electronics. >Ultrasensitive Poly-Si nanogap based on capacitive sensor for electrochemical detection
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Ultrasensitive Poly-Si nanogap based on capacitive sensor for electrochemical detection

机译:基于电容传感器的超灵敏多晶硅纳米间隙用于电化学检测

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Nanogap has become a new emerging subject to researcher around the globe for its complementary study with biomolecule and ionic level detection. Higher sensitivity and selectivity in sensing device attained by nanogap has resolved many limitations faced by previous bulk device. For this project, we present a novelty device provide ultrasensitive label-free detection using real time measurement. The fabrication of device involves only conventional lithographic process and simple dry oxidation process. By using 42 nm nanogap devices, the sensitivity of nanogap were tested by dropping 10μL of different level pH and NaCl concentrations onto the target. Experiments were performed by sweeping frequencies from 1 Hz to 1 MHz at room temperature with 30 mV input signal(0 V, DC, Offset). The effects of excitation frequency on capacitance sampling were analyzed.
机译:纳米间隙已通过生物分子和离子水平检测的补充研究成为全球研究人员的新兴课题。纳米间隙在传感设备中获得更高的灵敏度和选择性,解决了以前的大体积设备面临的许多局限性。对于此项目,我们提出了一种新颖的设备,可使用实时测量提供超灵敏的无标签检测。器件的制造仅涉及常规的光刻工艺和简单的干氧化工艺。通过使用42 nm纳米间隙设备,通过将10μL不同水平的pH和NaCl浓度滴到目标上来测试纳米间隙的灵敏度。通过在室温下用30 mV输入信号(0 V,DC,偏移)扫描从1 Hz到1 MHz的频率来进行实验。分析了激励频率对电容采样的影响。

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