首页> 外文会议>2011 International Symposium on Advanced Packaging Materials >Effect of surface finish (OSP and ENEPIG) on failure mechanism induced by electromigration in Sn-3.0Ag-0.5Cu flip chip solder interconnect
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Effect of surface finish (OSP and ENEPIG) on failure mechanism induced by electromigration in Sn-3.0Ag-0.5Cu flip chip solder interconnect

机译:表面光洁度(OSP和ENEPIG)对Sn-3.0Ag-0.5Cu倒装芯片焊料互连中电迁移引起的失效机理的影响

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摘要

The different effects of OSP and ENEPIG surface finishes on the electromigration-induced failure mechanism of Sn-3.0Ag-0.5Cu flip chip solder joint were investigated at 150 °C under a current density of l*104 A/cm2. In as-soldered state, the interfacial (Cuo55Ni045Sn5 IMC formed on Ni UBM at the chip side in both OSP and ENEPIG joints. However, the EM resistance of the two joints was greatly different when electrons flowed from chip to PCB though they had the same composition of interfacial (Cu,Ni)6Sn5 and the same Ni UBM. For OSP joint, the interfacial (Cu,Ni)6Sn5 and the Ni UBM displayed an excellent EM resistance; and the Cu content of interfacial (Cu,Ni) 6Sn5 IMC at the chip side was slightly higher than that of asreflowed joint. While for ENEPIG joint, the interfacial (Cu,Ni)6Sn5 IMC and Ni UBM were seriously consumed during EM, and the joint failed. The obvious difference of EM-induced failure between the OSP joint and the ENEPIG joint was due to the different effects of surface finishes. Compared with the ENEPIG joint, the OSP joint could offer a Cu source to improve the stability of interfacial (Cu,Ni) 6Sn5 IMC, which effectively inhibited the dissolution of Ni during EM.
机译:在150°C和1 * 104 A / cm2的电流密度下,研究了OSP和ENEPIG表面光洁度对Sn-3.0Ag-0.5Cu倒装芯片焊点电迁移引起的失效机理的不同影响。在焊接状态下,在OSP和ENEPIG接头的芯片侧Ni UBM上形成了界面(Cuo55Ni045Sn5 IMC)。但是,当电子从芯片流向PCB时,尽管它们具有相同的界面,但两个接头的EM电阻却大不相同。 (Cu,Ni)6Sn5和相同的Ni UBM的组成;对于OSP接头,界面(Cu,Ni)6Sn5和Ni UBM表现出优异的EM抗性;并且(Cu,Ni)6Sn5 IMC的Cu含量在芯片侧,稍高于回流焊; EMEP时,界面(Cu,Ni)6Sn5 IMC和Ni UBM大量消耗,接头失效。 OSP接头和ENEPIG接头是由于表面光洁度的不同影响,与ENEPIG接头相比,OSP接头可提供Cu来源以提高界面(Cu,Ni)6Sn5 IMC的稳定性,从而有效地抑制了溶解EM期间的Ni含量。

著录项

  • 来源
  • 会议地点 Xiamen(CN)
  • 作者单位

    Electronic Packaging Materials Laboratory, School of Materials Science Engineering,Dalian University of Technology, Dalian 116024, China;

    Electronic Packaging Materials Laboratory, School of Materials Science Engineering,Dalian University of Technology, Dalian 116024, China;

    Electronic Packaging Materials Laboratory, School of Materials Science Engineering,Dalian University of Technology, Dalian 116024, China;

    Electronic Packaging Materials Laboratory, School of Materials Science Engineering,Dalian University of Technology, Dalian 116024, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TN405.94;
  • 关键词

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